Ion‐beam synthesis of amorphous SiC films: Structural analysis and recrystallization-Reference-Cited by-同舟云学术

Ion‐beam synthesis of amorphous SiC films: Structural analysis and recrystallization

Author:

Serre C.¹,Calvo‐Barrio L.¹,Pérez‐Rodríguez A.¹,Romano‐Rodríguez A.¹,Morante J. R.¹,Pacaud Y.²,Kögler R.²,Heera V.²,Skorupa W.²

Affiliation:

1. E. M. E., Departament de Física Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 645‐647, 08028 Barcelona, Spain

2. Forschungszentrum Rossendorf e.V., Institut für Ionenstrahlphysik und Materialforschung, Postfach 510119, D‐01314 Dresden, Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference27 articles.

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2. P. G. Neudeck, J. Electron. Mater. 24, 283 (1995).JECMA50361-5235

5. H. G. Bohn, J. M. Williams, C. J. McHargue, and G. M. Begun, J. Mater. Res. 2, 107 (1987).JMREEE0884-2914

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