Effect of local fields on the Mg acceptor in GaN films and GaN substrates
Author:
Affiliation:
1. University of Alabama at Birmingham, Birmingham, Alabama 35294-1175, USA
2. Kyma Technologies, Inc., Raleigh, North Carolina 27617, USA
Funder
National Science Foundation (NSF)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/jap/120/13/1.4963112.pdf?itemId=/content/aip/journal/jap/120/13/10.1063/1.4963112&mimeType=pdf&containerItemId=content/aip/journal/jap
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3. GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates
4. High performance normally-off self-aligned metal gate GaN MISFETs on free-standing GaN substrates
5. Behavior of 2.8- and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities
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