Improved threshold of buried heterostructure InAs/GaInAsP quantum dot lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3574406
Reference15 articles.
1. Gain and the threshold of three-dimensional quantum-box lasers
2. Quantum dots for lasers, amplifiers and computing
3. High temperature performance of self-organised quantum dot laser with stacked p-doped active region
4. InP based lasers and optical amplifiers with wire-/dot-like active regions
5. Room temperature continuous-wave operation of buried ridge stripe lasers using InAs-InP (100) quantum dots as active core
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate;Semiconductors;2017-10
2. Quantum-dot lasers for 35 Gbit/s pulse-amplitude modulation and 160 Gbit/s differential quadrature phase-shift keying;SPIE Proceedings;2016-04-28
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