High continuous wave power, 0.8 μm-band, Al-free active-region diode lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118343
Reference15 articles.
1. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
2. Nearly ideal InP/In0.53Ga0.47As heterojunction regrowth on chemically prepared In0.53Ga0.47As surfaces
3. Stable operation in 0.87-μm light-emitting diode on Si substrate using Al-free materials
4. High‐power InGaAsP/GaAs 0.8‐μm laser diodes and peculiarities of operational characteristics
5. High power 875 nm Al-free laser diodes
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