High‐power InGaAsP/GaAs 0.8‐μm laser diodes and peculiarities of operational characteristics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112206
Reference5 articles.
1. InGaP/InGaAsP/GaAs 0.808 /spl mu/m separate confinement laser diodes grown by metalorganic chemical vapor deposition
2. High power, 0.98 μm, Ga0.8In0.2As/GaAs/Ga0.51In0.49P multiple quantum well laser
3. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
4. Well-barrier hole burning in quantum well lasers
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2. Study of InGaAsP and GaInP layers grown by MOCVD in pure N2 ambient for InGaAsP/GaAs single QW LD structures;Journal of Crystal Growth;2004-08
3. LPE-grown high-quality InGaAsP/GaAs semiconductor lasers;Fourth International Conference on Thin Film Physics and Applications;2000-11-29
4. High-power highly reliable Al-free active region laser diodes in the 785- to 830-nm region;SPIE Proceedings;2000-04-18
5. Short-wavelength (0.7 μm>λ>0.78 μm) high-power InGaAsP-active diode lasers;IEEE Journal of Selected Topics in Quantum Electronics;1999
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