Etching process of narrow wire and application to tunable-barrier electron pump-Reference-Cited by-同舟云学术

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Etching process of narrow wire and application to tunable-barrier electron pump

Published:2020-08-01 Issue:8 Volume:91 Page:085110
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Norimoto Shota¹^ORCID,Iwakiri Shuichi¹^ORCID,Yokoi Masahiko¹^ORCID,Arakawa Tomonori¹²^ORCID,Niimi Yasuhiro¹²^ORCID,Kobayashi Kensuke¹³^ORCID

Affiliation:

1. Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043, Japan

2. Center for Spintronics Research Network, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

3. Institute for Physics of Intelligence and Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0011767

Reference30 articles.

1. Quantized current in a quantum-dot turnstile using oscillating tunnel barriers

2. Single electron transport and current quantization in a novel quantum dot structure

3. A Capacitance Standard Based on Counting Electrons

4. Single-electron transport in a one-dimensional channel by high-frequency surface acoustic waves

5. Current quantization due to single-electron transfer in Si-wire charge-coupled devices

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