A Capacitance Standard Based on Counting Electrons-Reference-Cited by-同舟云学术

A Capacitance Standard Based on Counting Electrons

Published:1999-09-10 Issue:5434 Volume:285 Page:1706-1709
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Keller Mark W.¹,Eichenberger Ali L.¹,Martinis John M.¹,Zimmerman Neil M.²

Affiliation:

1. National Institute of Standards and Technology, Boulder, CO 80303, USA.

2. National Institute of Standards and Technology, Gaithersburg, MD 20899, USA.

Abstract

A capacitance standard based directly on the definition of capacitance was built. Single-electron tunneling devices were used to place N electrons of charge e onto a cryogenic capacitor C , and the resulting voltage change Δ V was measured. Repeated measurements of C = Ne /Δ V with this method have a relative standard deviation of 0.3 × 10 –6 . This standard offers a natural basis for capacitance analogous to the Josephson effect for voltage and the quantum Hall effect for resistance.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference21 articles.

1. B. N. Taylor Ed. The International System of Units (SI) NIST Spec. Publ. 330 (Government Printing Office Washington DC 1991) (available at ).

2. Taylor B. N., Witt T. J., Metrologia 26, 47 (1989).

3. The 1990 volt and ohm have not been formally integrated into the SI but they are in use worldwide as practical units because they can be reproduced with much smaller uncertainty than the SI volt and ohm.

4. Clothier W. K., Metrologia 1, 36 (1965).

5. H. Grabert and M. H. Devoret Eds. Single Charge Tunneling (Plenum New York 1992).

Cited by 198 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Universal transport in periodically driven systems without long-lived quasiparticles;Physical Review Research;2024-01-25

2. Toward the Ultimate Limit of Analyte Detection, in Graphene-Based Field-Effect Transistors;Nano Letters;2024-01-17

3. Superconducting pump manipulated by non-topologically quasi and topological interface states;New Journal of Physics;2023-12-01

4. Quantum dot source-drain transport response at microwave frequencies;Physical Review B;2023-11-16

5. Gating a Quantum Dot through the Sequential Removal of Single Electrons from a Nanoscale Floating Gate;PRX Quantum;2023-07-21