Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions-Reference-Cited by-同舟云学术

Photovoltaic devices based on high density boron-doped single-walled carbon nanotube/n-Si heterojunctions

Published:2011-01 Issue:1 Volume:109 Page:014321
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Saini Viney,Li Zhongrui,Bourdo Shawn,Kunets Vasyl P.,Trigwell Steven,Couraud Arthur,Rioux Julien,Boyer Cyril,Nteziyaremye Valens,Dervishi Enkeleda,Biris Alexandru R.,Salamo Gregory J.,Viswanathan Tito,Biris Alexandru S.

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3531112

Reference25 articles.

1. Variational approach to excitons in carbon nanotubes

2. Atomic structure and electronic properties of single-walled carbon nanotubes

3. Photovoltaic effect in ideal carbon nanotube diodes

4. High-Mobility Nanotube Transistor Memory

5. Conducting and transparent single-wall carbon nanotube electrodes for polymer-fullerene solar cells

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