Vacancy‐controlled model of degradation in InGaAs/AlGaAs/GaAs heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357355
Reference11 articles.
1. Reliable InGaAs quantum well lasers at 1.1 μm
2. Defect structure introduced during operation of heterojunction GaAs lasers
3. Defect structure of degraded heterojunction GaAlAs−GaAs lasers
4. Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers
5. Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well
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