Anisotropy of thermal expansion of GaAs on Si(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99553
Reference15 articles.
1. Ion beam sputter deposited zinc telluride films
2. Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
3. Structural properties of GaAs on (001) oriented Si and Ge substrates
4. Structure of heteroepitaxial GaAs on Si
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