Donor binding energies determined from temperature dependence of photoluminescence spectra in undoped and aluminum‐doped beta SiC films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.99021
Reference13 articles.
1. Temperature dependence of electrical properties of non‐doped and nitrogen‐doped beta‐SiC single crystals grown by chemical vapor deposition
2. Compensation in epitaxial cubic SiC films
3. Residual Donors in P-SiC Films
4. Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband Absorption
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