Effect of laser annealing on electrical and optical properties ofn‐mercury cadmium telluride
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348440
Reference20 articles.
1. TYPE CONVERSION ANDn‐pJUNCTION FORMATION IN Hg1−xCdxTe PRODUCED BY PROTON BOMBARDMENT
2. Electron radiation damage and annealing of Hg1−xCdxTe at low temperatures
3. Ion beam milling effect on electrical properties of Hg1−xCdxTe
4. Radiation Effects in Hg1-x Cdx Te
5. Electrical doping of HgCdTe by ion implantation and heat treatment
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1. Novel signal inversion of laser beam induced current for femtosecond-laser-drilling-induced junction on vacancy-doped p-type HgCdTe;Journal of Applied Physics;2014-05-28
2. Influence of High-Power Pulsed IR Laser Radiation on the Electrophysical Properties of Cd x Hg1– x Те Heteroepitaxial Layers;Russian Physics Journal;2013-05
3. Characteristic of HgCdTe photoconductive detector in energy distribution measurement system of laser spot in far field;SPIE Proceedings;2007-09-26
4. 3D Microengineering via Laser Direct-Write Processing Approaches;Direct-Write Technologies for Rapid Prototyping;2002
5. Effect of laser irradiation on the responsivity of mercury cadmium telluride detectors;Infrared Physics & Technology;1996-03
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