Ellipsometric characterization of LaNiO3−x films grown on Si (111) substrates: Effects of oxygen partial pressure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1686904
Reference18 articles.
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2. Preparation of epitaxial metallic LaNiO3 films on SrTiO3 by metalorganic decomposition for the oriented growth of PbTiO3
3. Synthesis of Conductive LaNiO3Thin Films by Chemical Solution Deposition
4. (Mn, Sb) doped-Pb(Zr, Ti)O3 infrared detector arrays
5. Investigation of PZT//LSCO/IPT//Aerogel Thin Film Composites for Uncooled Pyroelectric Ir Detectors
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3. Thickness effect on nanoscale electromechanical activity in Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films studied by piezoresponse force microscopy;Journal of Applied Physics;2011-11-15
4. Effects of applied electrical field on electronic structures in LaNiO3 conductive metallic oxide film: An optical spectroscopic study;Applied Physics Letters;2010-11-22
5. Direct observation of oxygen vacancy and its effect on the microstructure, electronic and transport properties of sputtered LaNiO3−δ films on Si substrates;Thin Solid Films;2010-11
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