Author:
Clem P.G.,Tuttle B.A.,Ruffner J.A.,Brinker C.J.,Schwartz R.W.,Rodriguez M.,Warren W.L.
Abstract
AbstractA monolithic thin film structure for uncooled pyroelectric infrared detector arrays was developed to integrate thermally isolated Pb(Zr,Ti)O3-based thin films on silicon, with a low thermal conductivity, aerogel thin film interlayer. Aerogel thin films of 0.4-1.2μm thickness and 70-85% porosity were deposited on silicon substrates by dip coating to form a thermal isolation layer. 200-400nm thick Pb(Zr0.4Ti0.6)O3 films deposited on (La,Sr)CoO3[LSCO]//Pt electrodes atop these aerogel films displayed a remanent polarization Pr = 28μ C/cm2, pyroelectric coefficient p = 30 nC/cm2K, and calculated noise equivalent temperature difference NETD = 0.07°C. Processing of Pb(Zr,Ti)O3 thin films atop the aerogel interlayer structure required modifications to deposition and heat treatment methods to minimize tensile stress accumulation. Effects of thermal processing and thin film stress state on ferroelectric properties are also reported.
Publisher
Springer Science and Business Media LLC
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