Interface engineering for lattice-matched epitaxy of ZnO on (La,Sr)(Al,Ta)O3(111) substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2130523
Reference19 articles.
1. Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO
2. Plasma-assisted molecular-beam epitaxy of ZnO epilayers on atomically flat MgAl2O4(111) substrates
3. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy
4. Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layer
5. Effects of Sapphire (0001) Surface Modification by Gallium Pre-Exposure on the Growth of High-Quality Epitaxial ZnO Film
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2. Epitaxial properties of ZnO thin films on LaAlO3 substrates by pulsed laser deposition;Journal of Crystal Growth;2015-07
3. Layer-by-layer growth of high-optical-quality ZnO epitaxy film on Si(111) substrate using a MgO/TiN buffer layer by pulsed-laser deposition;Surface and Interface Analysis;2014-02-05
4. Epitaxial growth of GaN films on unconventional oxide substrates;J. Mater. Chem. C;2014
5. Achieve high-quality GaN films on La0.3Sr1.7AlTaO6 (LSAT) substrates by low-temperature molecular beam epitaxy;CrystEngComm;2013
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