Layer-by-layer growth of high-optical-quality ZnO epitaxy film on Si(111) substrate using a MgO/TiN buffer layer by pulsed-laser deposition-Reference-Cited by-同舟云学术

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Layer-by-layer growth of high-optical-quality ZnO epitaxy film on Si(111) substrate using a MgO/TiN buffer layer by pulsed-laser deposition

Published:2014-02-05 Issue:4 Volume:46 Page:243-247
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Zhang Xia¹,Chen Hong²,Yan Zhi¹,Zhou Xiying¹,Lin Wensong¹,Li Xiaomin³

Affiliation:

1. Department of Material Engineering; Shanghai University of Engineering Science; 333 Longteng Road, Songjiang Shanghai 201620 China

2. Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics; Shanghai Jiao Tong University; 1954 Hua Shan Road Shanghai 200030 China

3. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics; Chinese Academy of Sciences; 1295 Ding Xi Road Shanghai 200050 China

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference21 articles.

1. Will UV Lasers Beat the Blues?

2. P-type doping and devices based on ZnO

3. p-type ZnO films by monodoping of nitrogen and ZnO-based p–n homojunctions

4. p-type conduction in wide-gap Zn1−xMgxO films grown by ultrasonic spray pyrolysis

5. Study on anomalous high p-type conductivity in ZnO films on silicon substrate prepared by ultrasonic spray pyrolysis

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