Al0.2Ga0.8Asp+‐njunction solar cells grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.335871
Reference6 articles.
1. p-Ga0.2Al0.8As/p-Ga1-yAlyAs/n-Ga1-yAlyAs Solar Cells
2. Efficient AlGaAs shallow‐homojunction solar cells
3. High efficiency 1.43 and 1.69 eV band gap Ga1−xAlxAsGaAs solar cells for multicolour applications
4. Influence of growth conditions and alloy composition on deep electron traps of n-AlxGa1−xAs grown by MBE
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1. Impact of the growth temperature on the performance of 1.70-eV Al0.22Ga0.78As solar cells grown by MBE;Journal of Crystal Growth;2017-10
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3. Investigations on Al$_{\bm x}$Ga$_{\bm {1-x}}$As Solar Cells Grown by MOVPE;IEEE Journal of Photovoltaics;2015-01
4. Review of the application of molecular beam epitaxy for high efficiency solar cell research;Solar Cells;1991-05
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