III–V compound semiconductor multi-junction solar cells fabricated by room-temperature wafer-bonding technique-Reference-Cited by-同舟云学术

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III–V compound semiconductor multi-junction solar cells fabricated by room-temperature wafer-bonding technique

Published:2015-04-21 Issue:5 Volume:54 Page:056601
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Arimochi Masayuki,Watanabe Tomomasa,Yoshida Hiroshi,Tange Takashi,Nomachi Ichiro,Ikeda Masao,Dai Pan,He Wei,Ji Lian,Lu Shulong,Yang Hui,Uchida Shiro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/54/i=5/a=056601/pdf

Reference32 articles.

1. Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells

2. 40% efficient metamorphic GaInP∕GaInAs∕Ge multijunction solar cells

3. High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction

4. Novel materials for high-efficiency III–V multi-junction solar cells

5. Current-matched triple-junction solar cell reaching 41.1% conversion efficiency under concentrated sunlight

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1. Comparison of different passivation layers for GaInAs solar cells grown by solid-source molecular beam epitaxy;Journal of Crystal Growth;2022-09

2. Design of Grating Al2O3 Passivation Structure Optimized for High-Efficiency Cu(In,Ga)Se2 Solar Cells;Sensors;2021-07-16

3. Dispersive Optical Systems for Highly-Concentrated Solar Spectrum Splitting: Concept, Design, and Performance Analyses;Energies;2019-12-11

4. Growth of InGaAs Solar Cells on InP(001) Miscut Substrates Using Solid‐Source Molecular Beam Epitaxy;physica status solidi (a);2019-09-23

5. Room-temperature bonding of GaAs//Si and GaN//GaAs wafers with low electrical resistance;Applied Physics Express;2018-09-07

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