Analysis of SiH vibrational absorption in amorphous SiOx:H (0≤x≤2.0) alloys in terms of a charge‐transfer model
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110386
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1. Variation of semiconductor properties through the SiOx region of Si SiO2 interfaces
2. Nonvolatile semiconductor memory devices
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5. Si‐H and N‐H vibrational properties in glow‐discharge amorphous SiNx:H films (0
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