A molecular dynamics study on indentation response of single crystalline wurtzite GaN-Reference-Cited by-同舟云学术

A molecular dynamics study on indentation response of single crystalline wurtzite GaN

Published:2018-09-21 Issue:11 Volume:124 Page:115102
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Qian Yu¹,Shang Fulin¹,Wan Qiang²,Yan Yabin²

Affiliation:

1. State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace, Xi'an Jiaotong University, Xi'an 710049, Shaanxi, People's Republic of China

2. Institute of System Engineering, China Academy of Engineering Physics, Mianyang 621900, Sichuan, People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5041738

Reference56 articles.

1. Optical and electrical properties of epitaxial (Mg,Cd)xZn1−xO, ZnO, and ZnO:(Ga,Al) thin films on c-plane sapphire grown by pulsed laser deposition

2. High-power single-mode ZnO thin-film random lasers

3. A high power ZnO thin film piezoelectric generator

4. HVPE GaN for high power electronic Schottky diodes

5. Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN

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