Influence of irradiation-induced point defects on nanotribological properties of m-plane GaN investigated using molecular dynamics simulation-Reference-Cited by-同舟云学术

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Influence of irradiation-induced point defects on nanotribological properties of m-plane GaN investigated using molecular dynamics simulation

Published:2024-03 Issue: Volume:38 Page:107814
ISSN:2352-4928
Container-title:Materials Today Communications
language:en
Short-container-title:Materials Today Communications

Author:

Duan Lingfeng,Tan Shilian,Liu Yang,Guo Jian

Funder

National Natural Science Foundation of China

Hunan Provincial Natural Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Mechanics of Materials,General Materials Science

Reference40 articles.

1. A revolution in lighting;Pust;Nat. Mater.,2015

2. Energy efficiency analysis of GaN-based blue light emitters;Joachim;ECS J. Solid State Sci. Technol.,2019

3. Irradiation effects on nanocrystalline materials;Chang;Front. Mater. Sci.,2013

4. Molecular dynamics simulation of annealing of post-ballistic cascade remnants in silicon;Borodin;Nucl. Instrum. Methods Phys. Res. Sect. B: Beam Interact. Mater. At.,2012

5. Simulated research on displacement damage of gallium nitride radiated by different neutron sources;Xie;Acta Phys. Sin.,2020

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