Electrical breakthrough effect for end pointing in 90 and 45nm node circuit edit-Reference-Cited by-同舟云学术

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Electrical breakthrough effect for end pointing in 90 and 45nm node circuit edit

Published:2006-03-20 Issue:12 Volume:88 Page:124104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Liu Kun,Soskov Alex,Scipioni Larry,Bassom Neil,Sijbrandij Sybren,Smith Gerald

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2190710

Reference7 articles.

1. Proceedings of the 30th International Symposium for Testing and Failure Analysis;Herschbein S.,2004

2. Circuit editing of copper and low-k dielectrics in nanotechnology devices

3. Focused ion beam applications to solid state devices

4. Electron beam assisted high aspect ratio, submicrometre etching of passivation SiO2on large-scale integrated circuits

5. Electron induced nanodeposition of tungsten using field emission scanning and transmission electron microscopes

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication of complex three-dimensional nanostructures using focused ion beam and nanomanipulation;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2010-05

2. Sub-5nm FIB direct patterning of nanodevices;Microelectronic Engineering;2007-05

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