Energy levels and alloy scattering in InP‐In (Ga)As heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94435
Reference7 articles.
1. 1.5 μm room-temperature pulsed operation of GaInAsP/InP double heterostructure grown by LP MOCVD
2. Two‐dimensional electron gas in a In0.53Ga0.47As‐InP heterojunction grown by metalorganic chemical vapor deposition
3. Electron mobilities in modulation doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions grown by molecular beam epitaxy
4. Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunction. I. Subband Structure and Light-Scattering Spectra
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