Effect of N/Ge co-implantation on the Ge activation in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1400089
Reference15 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
3. Metal semiconductor field effect transistor based on single crystal GaN
4. Microwave performance of GaN MESFETs
5. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
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