Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling-Reference-Cited by-同舟云学术

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Comparison of defect structure in Si and Ge ion implanted GaN epilayers by RBS/channeling

Published:2019-04 Issue: Volume:444 Page:74-79
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Pągowska K.D.,Kozubal M.,Taube A.,Guziewicz M.,Gołaszewska-Malec K.,Kruszka R.,Jakieła R.,Piotrowska A.

Funder

National Science Center

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. III-Nitride Semiconductors and their Modern Devices,2013

2. Remarkable reduction of on-resistance by ion implantation in GaN/AlGaN/GaN HEMTs with low gate leakage current;Nomoto;IEEE Electron. Device Lett.,2007

3. Doping of III–V compound semiconductors by ion implantation;Stephens;Nucl. Instrum. Methods Phys. Res.,1983

4. Ion implantation doping and isolation of III–V semiconductors;Pearton;Nucl. Instrum. Methods Phys. Res. Sect. B Beam Interact. Mater. At.,1991

5. Thermal stability of implanted dopants in GaN;Wilson;Appl. Phys. Lett.,1995

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of radiative and non-radiative recombination lifetimes in InGaN quantum wells with different ion-implantation damage;Japanese Journal of Applied Physics;2023-12-21

2. Structural and electrical characterizations of Si-implanted GaN with a high dose at elevated temperatures;Materials Science in Semiconductor Processing;2022-11

3. Ohmic contact formation to GaN by Ge+ implantation doping: Implantation fluence and encapsulation layer studies;Materials Science in Semiconductor Processing;2022-08

4. Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies;Materials Science in Semiconductor Processing;2021-02

5. Investigations and modeling aspects of the influence of the high energy and high dose implantation on the optical and transport parameters of implanted layers in silicon;Physica B: Condensed Matter;2020-02

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