Influence of the atom source operating parameters on the structural and optical properties of In xGa 1 − xN nanowires grown by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Influence of the atom source operating parameters on the structural and optical properties of In xGa 1 − xN nanowires grown by plasma-assisted molecular beam epitaxy

Published:2018-10-28 Issue:16 Volume:124 Page:165703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Hille P.¹²,Walther F.¹³,Klement P.¹^ORCID,Müßener J.²,Schörmann J.¹,Kaupe J.¹,Mitić S.¹^ORCID,Rosemann N. W.¹⁴^ORCID,Chatterjee S.¹⁴^ORCID,Beyer A.⁴^ORCID,Gries K. I.⁴,Volz K.⁴,Eickhoff M.¹

Affiliation:

1. I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, 35392 Gießen, Germany

2. Institut für Festkörperphysik, Universität Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany

3. Physikalisch-Chemisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 17, 35392 Gießen, Germany

4. Faculty of Physics and Materials Science Center, Philipps Universität Marburg, Renthof 5, 35032 Marburg, Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5050391

Reference53 articles.

1. Submicrometre resolved optical characterization of green nanowire-based light emitting diodes

2. Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors

3. Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and Detectors

4. Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters

5. Nanoscale Electronic Conditioning for Improvement of Nanowire Light-Emitting-Diode Efficiency

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