Optical Phase‐Shift Measurement of Carrier Decay Times (77°K) on Lightly Doped Double‐Surface and Surface‐Free Epitaxial GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1660485
Reference18 articles.
1. Spontaneous and Stimulated Recombination Radiation in Semiconductors
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4. Recombination lifetime in a semiconductor laser diode
5. Electroluminescence in Amphoteric Silicon‐Doped GaAs Diodes. II. Transient Response
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