Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping-Reference-Cited by-同舟云学术

Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping

Published:2007-07-16 Issue:3 Volume:91 Page:033505
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Then H. W.,Feng M.,Holonyak N.,Wu C. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2759263

Reference12 articles.

1. Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors

2. Quantum-well-base heterojunction bipolar light-emitting transistor

3. Laser operation of a heterojunction bipolar light-emitting transistor

4. Carrier lifetime and modulation bandwidth of a quantum well AlGaAs∕InGaP∕GaAs∕InGaAs transistor laser

5. Spontaneous and Stimulated Carrier Lifetime (77°K) in a High‐Purity, Surface‐Free GaAs Epitaxial Layer

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