Unintentional hydrogen concentration in liquid encapsulation Czochralski grown III–V compounds
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105818
Reference18 articles.
1. Evidence for complexes of hydrogen with deep-level defects in bulk III-V materials
2. Evidence for hydrogen-transition-metal complexes in as-grown indium phosphide
3. Evidence for Complexes of Hydrogen with Impurities or Defects in Bulk III-V Materials
4. Unintentional hydrogen incorporation in crystals
5. Passivation of zinc acceptors in InP by atomic hydrogen coming from arsine during metalorganic vapor phase epitaxy
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1. Introduction;Springer Series in Solid-State Sciences;2011-10-27
2. Investigation on deep level defects in rapid thermal annealed undoped n-type InP;Journal of Materials Science: Materials in Electronics;2009-05-07
3. Dissociation of H-related defect complex in InP using high energy light ions;Journal of Applied Physics;2008-08
4. Modification of charge compensation in semi-insulating semiconductors by high energy light ion irradiation;Journal of Applied Physics;2008-03
5. Investigation of vacancy defect in InP crystal by positron lifetime measurement;Journal of Physics and Chemistry of Solids;2008-02
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