A new high‐power, narrow‐beam transverse‐mode stabilized semiconductor laser at 1.5 μm: the heteroepitaxial ridge‐overgrown laser-Reference-Cited by-同舟云学术

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A new high‐power, narrow‐beam transverse‐mode stabilized semiconductor laser at 1.5 μm: the heteroepitaxial ridge‐overgrown laser

Published:1984-11-15 Issue:10 Volume:45 Page:1025-1027
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsang W. T.,Logan R. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.95050

Reference3 articles.

1. Transverse-mode control in an injection laser by a strip-loaded waveguide

2. Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm

3. Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm

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