Improvement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2207487
Reference22 articles.
1. The Blue Laser Diode
2. Luminescence of epitaxial GaN laterally overgrown on (0001) sapphire substrate: Spectroscopic characterization and dislocation contrasts
3. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
4. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
5. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
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2. High Resolution X-Ray Diffraction and Rutherford Backscattering Spectroscopy Studies on Laser Molecular Beam Epitaxy Grown GaN Layers on Sapphire (0001);Advanced Science Letters;2014-07-01
3. Enhanced Light Extraction from GaN-Based Vertical Light-Emitting Diodes with a Nano-Roughened N-GaN Surface Using Dual-Etch;Journal of Nanoscience and Nanotechnology;2013-12-01
4. InGaN Light-Emitting Diode with a Nanoporous/Air-Channel Structure;Applied Physics Express;2013-01-01
5. Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE;Semiconductor Science and Technology;2012-06-27
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