Atomic layer deposition of hafnium oxide on germanium substrates-Reference-Cited by-同舟云学术

Atomic layer deposition of hafnium oxide on germanium substrates

Published:2005-03-15 Issue:6 Volume:97 Page:064104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Delabie Annelies,Puurunen Riikka L.,Brijs Bert,Caymax Matty,Conard Thierry,Onsia Bart,Richard Olivier,Vandervorst Wilfried,Zhao Chao,Heyns Marc M.,Meuris Marc,Viitanen Minna M.,Brongersma Hidde H.,de Ridder Marco,Goncharova Lyudmila V.,Garfunkel Eric,Gustafsson Torgny,Tsai Wilman

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1856221

Reference47 articles.

1. Surface Chemistry for Atomic Layer Growth

2. M. Ritala and M. Leskelä, inHandbook of Thin Film Materials, edited by H. S. Nalwa (Academic, New York, 2002), Vol. 1, p. 103.

3. Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

4. Growth mechanism and continuity of atomic layer deposited TiN films on thermal SiO2

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