Sb doping and electrical characteristics of ultrathin SinGemsuperlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346979
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5. Surface segregation of Sb on Si(100) during molecular beam epitaxy growth
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1. Implanted collector profile optimization in a SiGe HBT process;Solid-State Electronics;2001-03
2. Segregation of n-dopants on SiGe surfaces;Applied Surface Science;1996-08
3. Fabrication of n‐ and p‐channel in‐plane‐gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing;Applied Physics Letters;1996-05-20
4. UV photochemistry of trivinylantimony adsorbed on quartz;Materials Chemistry and Physics;1993-01
5. Ultrathin SimGenstrained layer superlattices-a step towards Si optoelectronics;Semiconductor Science and Technology;1992-09-01
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