High Speed Integrated Circuit Using Silicon Molecular Beam Epitaxy (Si‐MBE)-Reference-Cited by-同舟云学术

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High Speed Integrated Circuit Using Silicon Molecular Beam Epitaxy (Si‐MBE)

Published:1985-10-01 Issue:10 Volume:132 Page:2481-2486
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Kasper E.¹²,Wörner K.¹²

Affiliation:

1. AEG‐Telefunken Forschungsinstitut, D 7900 Ulm, Germany

2. Telefunken electronic GmbH, D 7100 Heilbronn, Germany

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2113604/pdf

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic structure of light-emitting superlattices composed of quantum films of silicon: Theoretical approach;Physical Review B;2007-06-05

2. The Possibility of Fabricating Light-Emitting Superlattices Composed of Si Quantum Films;Japanese Journal of Applied Physics;2004-09-24

3. Silicon/germanium superlattices;Handbook of Electroluminescent Materials;2004-06

4. Films by Molecular-Beam Epitaxy;Silicon;2004

5. Infrared silicon/germanium detectors;Handbook of Infra-red Detection Technologies;2002

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