Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments-Reference-Cited by-同舟云学术

Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments

Published:2013-06-10 Issue:23 Volume:102 Page:231604
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Geissbühler Jonas,De Wolf Stefaan,Demaurex Bénédicte,Seif Johannes P.,Alexander Duncan T. L.,Barraud Loris,Ballif Christophe

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4811253

Reference28 articles.

1. T. Kinoshita, D. Fujishima, A. Yano, A. Ogane, S. Tohoda, K. Matsuyama, Y. Nakamura, N. Tokuoka, H. Kanno, H. Sakata, M. Taguchi, and E. Maruyama, in Proceedings of the 26th European Photovoltaic Solar Energy Conference and Exhibition (WIP, Hamburg, Germany, 2011), p. 871.

2. High-efficiency Silicon Heterojunction Solar Cells: A Review

3. Development of New a-Si/c-Si Heterojunction Solar Cells: ACJ-HIT (Artificially Constructed Junction-Heterojunction with Intrinsic Thin-Layer)

4. Abruptness of a-Si:H∕c-Si interface revealed by carrier lifetime measurements

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