Double quantum-well tunnel junctions with high peak tunnel currents and low absorption for InP multi-junction solar cells-Reference-Cited by-同舟云学术

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Double quantum-well tunnel junctions with high peak tunnel currents and low absorption for InP multi-junction solar cells

Published:2012-05-21 Issue:21 Volume:100 Page:213907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lumb Matthew P.,Yakes Michael K.,González María,Vurgaftman Igor,Bailey Christopher G.,Hoheisel Raymond,Walters Robert J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4722890

Reference14 articles.

1. New Phenomenon in Narrow Germaniump−nJunctions

2. High-efficiency solar cells from III-V compound semiconductors

3. III–V compound multi-junction solar cells: present and future

4. Novel materials for high-efficiency III–V multi-junction solar cells

5. Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells

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1. InP-based tunnel junctions for ultra-high concentration photovoltaics;Optics Express;2023-12-19

2. Ultrathin Oxides for Solar Cells;Ultrathin Oxide Layers for Solar and Electrocatalytic Systems;2022-01-12

3. Dual Junction GaInP/GaAs Solar Cell with Enhanced Efficiency Using Type‐A InP Quantum Wells;physica status solidi (a);2022-01-07

4. High current density tunnel diodes for multi-junction photovoltaic devices on InP substrates;Applied Physics Letters;2021-02-08

5. Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted;Crystals;2020-11-28

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