Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters-Reference-Cited by-同舟云学术

Quantitative analysis of doped/undoped ZnO nanomaterials using laser assisted atom probe tomography: Influence of the analysis parameters

Published:2015-12-07 Issue:21 Volume:118 Page:215703
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Amirifar Nooshin,Lardé Rodrigue,Talbot Etienne,Pareige Philippe,Rigutti Lorenzo,Mancini Lorenzo^ORCID,Houard Jonathan^ORCID,Castro Celia,Sallet Vincent,Zehani Emir,Hassani Said,Sartel Corine,Ziani Ahmed,Portier Xavier

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4936167

Reference38 articles.

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2. A comprehensive review of ZnO materials and devices

3. Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

4. Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient

5. Ultraviolet emission from a ZnO rod homojunction light-emitting diode

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