Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient-Reference-Cited by-同舟云学术

Ultraviolet electroluminescence from n-ZnO:Ga/p-ZnO:N homojunction device on sapphire substrate with p-type ZnO:N layer formed by annealing in N2O plasma ambient

Published:2008-07 Issue:4-6 Volume:460 Page:548-551
ISSN:0009-2614
Container-title:Chemical Physics Letters
language:en
Short-container-title:Chemical Physics Letters

Author:

Sun J.C.,Liang H.W.,Zhao J.Z.,Bian J.M.,Feng Q.J.,Hu L.Z.,Zhang H.Q.,Liang X.P.,Luo Y.M.,Du G.T.

Publisher

Elsevier BV

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Reference24 articles.

1. Fabrication of ZnO-based metal–insulator–semiconductor diodes by ion implantation

2. Deposition and electrical properties of N–In codopedp-type ZnO films by ultrasonic spray pyrolysis

3. Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

4. Origin ofp-type doping difficulty in ZnO: The impurity perspective

5. Blue Light-Emitting Diode Based on ZnO

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