InGaN/GaN quantum well structures with greatly enhanced performance on a-plane GaN grown using self-organized nano-masks
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3658803
Reference12 articles.
1. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells
2. Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates
3. Demonstration of high power blue-green light emitting diode on semipolar (112̄2) bulk GaN substrate
4. High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers
5. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
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1. Atomistic analysis of piezoelectric potential fluctuations in zinc-blende InGaN/GaN quantum wells: A Stillinger-Weber potential based analysis;Physical Review B;2021-04-19
2. Semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent;Applied Physics Express;2020-08-14
3. Unidirectional luminescence from InGaN/GaN quantum-well metasurfaces;Nature Photonics;2020-06-01
4. Impact of 3D growth and SiN x interlayer on the quality of (11–22) semi-polar GaN grown on m-plane sapphire;Applied Physics Express;2019-10-07
5. Epitaxial GaN films with ultralow threading dislocation densities grown on an SiO2-masked patterned sapphire substrate;Applied Physics Express;2019-09-05
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