Planar p-on-n HgCdTe heterostructure infrared photodiodes on Si substrates by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118683
Reference8 articles.
1. HgCdTe 128×128 infrared focal plane arrays on alternative substrates of CdZnTe/GaAs/Si
2. HgCdTe on GaAs/Si for mid‐wavelength infrared focal plane arrays
3. Molecular‐beam epitaxial growth of CdTe(112) on Si(112) substrates
4. Molecular-beam epitaxy of CdTe on large area Si(100)
5. Heteroepitaxy of CdTe on {211}Si substrates by molecular beam epitaxy
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1. Dislocation reduction in HgCdTe grown on CdTe/Si;SPIE Proceedings;2016-05-26
2. CdTe/Si Composite Substrate and HgCdTe Epitaxy;Technology for Advanced Focal Plane Arrays of HgCdTe and AlGaN;2016
3. In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy;Journal of Electronic Materials;2015-07-22
4. High Resolution X-ray Diffraction Studies of MBE-Grown HgCdTe Layers on Bulk-Grown CdZnTe Substrate;Journal of Electronic Materials;2015-03-06
5. Improving surface smoothness and photoluminescence of CdTe(111)A on Si(111) substrates grown by molecular beam epitaxy using Mn atoms;Journal of Alloys and Compounds;2014-04
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