Suppressed polaronic conductivity induced sensor response enhancement in Mo doped V2O5 nanowires

Abstract

In this paper, we show the direct correlation between the suppression of the polaronic oxygen vacancy defect (Vo) density and gas sensor response of 1 at. % Mo-doped V2O5 nanowires (MVONWs). Doping 1 at. % Mo5+ leads to substitution at the V5+ site in V2O5 nanowires (VONWs) and, therefore, reduction in Vo defects. This, in turn, affects the charge carrier hopping sites and, subsequently, enhances the sensor response at lower temperatures (<320 °C). The Mo5+ dopants lead to the lowering of Fermi energy (EF) toward valence band maxima due to the reduced Vo donor density. The polaron suppression is confirmed with the activation energy of polaron hopping, increasing from 195 to 385 meV in VONWs and MVONWs. As a result, the response to ethanol gas enhanced as the depletion width is widened for the given cross section of the nanowires. This may lead to a large depletion controlled cross-sectional area and, therefore, better sensitivity. At about 350 °C, VONWs show a change in the slope of resistance vs temperature (MIT), which is not observed in the case of MVONWs. This is attributed to the presence of the enhanced non-stoichiometry of V ion resulting in metallic behavior and accompanied by a sudden rise in the sensor response at this temperature. Moreover, the absence of MIT may be attributed to the lack of such a sudden rise in the response in MVONWs.