Effect of oxidation processing on the energy distribution and charging time of radiation‐induced interface traps
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105087
Reference10 articles.
1. Comparison of interface‐state buildup in MOS capacitors subjected to penetrating and nonpenetrating radiation
2. Slow and fast states induced by hot electrons at Si‐SiO2interface
3. Flicker Noise in Electronic Devices
4. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
5. Random telegraph noise of deep-submicrometer MOSFETs
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1. Measurement of plasma etch damage by a new slow trap profiling technique;IEEE Electron Device Letters;1996-11
2. Slow states in vacuum ultraviolet irradiated metal–oxide–silicon systems;Journal of Applied Physics;1996-02
3. Characterisation of Dielectric Damage in MOS Capacitors by a New Current Transient Measurement Technique;MRS Proceedings;1996
4. Effect of synchrotron radiation on electrical characteristics of SiOxNythin films formed by rapid thermal processing in a N2O ambient;Applied Physics Letters;1993-12-13
5. Effect of Key Processing Steps on Post Radiation Midgap Voltage;Journal of The Electrochemical Society;1993-10-01
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