Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures-Reference-Cited by-同舟云学术

Kinetically controlled indium surface coverage effects on PAMBE-growth of InN/GaN(0001) quantum well structures

Published:2018-05-21 Issue:19 Volume:123 Page:195302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Li Chen¹,Maidaniuk Yurii¹,Kuchuk Andrian V.¹^ORCID,Shetty Satish¹,Ghosh Pijush²,White Thomas P.¹,Morgan Timothy Al.¹^ORCID,Hu Xian³^ORCID,Wu Yang¹,Ware Morgan E.¹²^ORCID,Mazur Yuriy I.¹^ORCID,Salamo Gregory J.¹³

Affiliation:

1. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

2. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

3. Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5025671

Reference38 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

3. Design and Realization of Wide-Band-Gap ($\sim$2.67 eV) InGaN p-n Junction Solar Cell

4. Quantitative Model for the MBE-Growth of Ternary Nitrides

5. Growth mechanism of InGaN by plasma assisted molecular beam epitaxy

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3. Effect of indium accumulation on the growth and properties of ultrathin In(Ga)N/GaN quantum wells;Materials & Design;2020-05