Coherent growth of GaGdN layers with high Gd concentration on GaN(0001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4767992
Reference16 articles.
1. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
2. Molecular beam epitaxy of wurtzite (Ga,Mn)N films on sapphire(0001) showing the ferromagnetic behaviour at room temperature
3. Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductors
4. An oxide-diluted magnetic semiconductor: Mn-doped ZnO
5. Study of diluted magnetic semiconductor: Co-doped ZnO
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1. Defect–defect magnetic coupling in Gd doped GaN epitaxial films: A polarization selective magneto-photoluminescence study;Applied Physics Letters;2020-07-13
2. Electronic structure of magnetic impurities and defects in semiconductors;Rare Earth and Transition Metal Doping of Semiconductor Materials;2016
3. Systematic study of the exchange interactions in Gd-doped GaN containing N interstitials, O interstitials, or Ga vacancies;Physical Review B;2015-09-17
4. Structural and defect characterization of Gd-doped GaN films by X-ray diffraction and positron annihilation;Journal of Physics: Conference Series;2014-04-28
5. Photoluminescence properties in GaGdN grown on GaN(0001) by PA-MBE;Journal of Crystal Growth;2013-09
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