Structural and defect characterization of Gd-doped GaN films by X-ray diffraction and positron annihilation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
http://stacks.iop.org/1742-6596/505/i=1/a=012023/pdf
Reference13 articles.
1. Room-temperature observation of ferromagnetism in diluted magnetic semiconductor GaGdN grown by RF-molecular beam epitaxy
2. Ferromagnetism in short-period GaGdN/GaN superlattices grown by RF-MBE
3. Strong atomic ordering in Gd-doped GaN
4. Effect of growth conditions on magnetic and structural properties in Gd-doped GaN layers grown by plasma-assisted molecular beam epitaxy
5. Coherent growth of GaGdN layers with high Gd concentration on GaN(0001)
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1. Temperature-independent optical transition with sub-nanometer linewidth in thermally diffused Gadolinium in GaN;Optics Letters;2017-05-30
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