The suppressed negative bias illumination-induced instability in In-Ga-Zn–O thin film transistors with fringe field structure-Reference-Cited by-同舟云学术

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The suppressed negative bias illumination-induced instability in In-Ga-Zn–O thin film transistors with fringe field structure

Published:2012-11-26 Issue:22 Volume:101 Page:223502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Yu-Chun,Chang Ting-Chang,Li Hung-Wei,Hsieh Tien-Yu,Chen Te-Chih,Wu Chang-Pei,Chou Cheng-Hsu,Chung Wang-Cheng,Chang Jung-Fang,Tai Ya-Hsiang

Funder

National Science Council Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4767996

Reference13 articles.

1. Present status of amorphous In–Ga–Zn–O thin-film transistors

2. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

3. Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory

4. Developments in nanocrystal memory

5. Full-Swing InGaZnO Thin Film Transistor Inverter with Depletion Load

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1. Amorphous InGaZnO Thin-Film Transistors with Double-Stacked Channel Layers for Ultraviolet Light Detection;Micromachines;2022-11-28

2. Elevated‐Metal Metal‐Oxide Thin‐Film Transistors: A Back‐Gate Transistor Architecture with Annealing‐Induced Source/Drain Regions;Amorphous Oxide Semiconductors;2022-05-20

3. Improving a-InGaZnO TFTs Reliability by Optimizing Electrode Capping Structure Under Negative Bias Illumination Stress;IEEE Electron Device Letters;2020-08

4. Fully transparent high performance thin film transistors with bilayer ITO/Al-Sn-Zn-O channel structures fabricated on glass substrate;Scientific Reports;2017-05-04

5. Elevated-Metal Metal-Oxide (EMMO) Thin-Film Transistor: Technology and Characteristics;IEEE Electron Device Letters;2016

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