Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon-Reference-Cited by-同舟云学术

Investigation on the dependence of degradation rate on hole concentration during boron-oxygen related light-induced degradation in crystalline silicon

Published:2018-08 Issue:8 Volume:8 Page:085219
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Graf Alexander¹^ORCID,Herguth Axel¹,Hahn Giso¹

Affiliation:

1. University of Konstanz, Department of Physics, Universitätsstr. 10, 78457 Konstanz, Germany

Funder

Bundesministerium für Wirtschaft und Energie

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5047084

Reference39 articles.

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3. S. W. Glunz, S. Rein, W. Warta, J. Knobloch, and W. Wettling, in Proceedings of the 2nd World Conference on Photovoltaic Solar Energy Conversion, 1343 (1998).

4. J. Schmidt, A. G. Aberle, and R. Hezel, in Proceedings of the 26th IEEE Photovoltaic Specialists Conference, 13 (1997).

5. Fundamental boron-oxygen-related carrier lifetime limit in mono- and multicrystalline silicon

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