Threshold, spectral, and output power characteristics of GaAs/Ga1−xAlxAs single‐heterostructure diode lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654880
Reference5 articles.
1. GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room Temperature
2. Dependence of Threshold Current Density and Efficiency on Fabry‐Perot Cavity Parameters: Single Heterojunction (AlGa)As–GaAs Laser Diodes
3. Experimental properties of injection lasers: modal distribution of laser power
4. High‐power narrow‐linewidth operation of GaAs diode lasers
5. Large Wavelength Changes with Cavity Q in Injection Lasers
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1. Lasers, their development, and applications at M.I.T. Lincoln Laboratory;IEEE Journal of Quantum Electronics;1984-06
2. Broadband tuning (ΔE∼100 meV) of AlxGa1−xAs quantum well heterostructure lasers with an external grating;Applied Physics Letters;1983-10-15
3. Mode competition in injection lasers;Optics Communications;1979-02
4. FABRICATION AND OPERATING CHARACTERISTICS;Heterostructure Lasers;1978
5. In1−xGaxP1−zAszdouble‐heterojunction‐laser operation (77 °K, yellow) in an external grating cavity;Journal of Applied Physics;1976-08
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