In1−xGaxP1−zAszdouble‐heterojunction‐laser operation (77 °K, yellow) in an external grating cavity
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323160
Reference14 articles.
1. High‐power narrow‐linewidth operation of GaAs diode lasers
2. Time delays in external‐cavity‐controlled GaAs/GaxAl1−xAs single‐heterostructure diode lasers
3. Threshold, spectral, and output power characteristics of GaAs/Ga1−xAlxAs single‐heterostructure diode lasers
4. The gain profile and time-delay effects in external-cavity-controlled GaAs lasers
5. Flashlight-Size External Cavity Semiconductor Laser with Narrow-Linewidth Tunable Output
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1. Homogeneous gain saturation in 1.5 μm InGaAsP traveling‐wave semiconductor laser amplifiers;Applied Physics Letters;1987-08-10
2. High‐energy (λ≲7300 Å) 300 K operation of single‐ and multiple‐stripe quantum‐well heterostructure laser diodes in an external grating cavity;Journal of Applied Physics;1984-08
3. Longitudinal mode behavior of PbSnTe buried heterostructure lasers;Applied Physics Letters;1981-12
4. Optical coupling of two injection lasers: A new experimental approach to study the gain broadening mechanism;IEEE Journal of Quantum Electronics;1981-05
5. A new experimental approach for studying the gain broadening mechanism in semiconductor lasers;Journal of Applied Physics;1981-03
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