Light and elevated temperature induced degradation in gallium- and boron-doped hpmc-Si wafers studied by hyperspectral photoluminescence imaging-Reference-Cited by-同舟云学术

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Light and elevated temperature induced degradation in gallium- and boron-doped hpmc-Si wafers studied by hyperspectral photoluminescence imaging

Published:2023 Issue: Volume: Page:
ISSN:0094-243X
Container-title:SILICONPV 2022, THE 12TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS
language:
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Author:

Mehl Torbjørn,Berge Oda Goa,Burud Ingunn,Søndenå Rune,Olsen Espen

Publisher

AIP Publishing

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0148403

Reference25 articles.

1. F. Kersten et al., IEEE 42nd Photovoltaic Specialist Conference, (2015).

2. ITRPV, 11th Edition October 2020. https://itrpv.vdma.org/download.

3. Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application

4. Resistivity and lifetime variation along commercially grown Ga- and B-Doped Czochralski Si ingots and its effect on light-induced degradation and performance of solar cells

5. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon

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